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igbt trenchstop?p erformance technologycopackedwithrapid1 fastanti-paralleldiode IKW50N60DTP 600vduopackigbtanddiode trenchstop tm p erformance series datasheet industrialpowercontrol
2 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 highspeedigbtintrenchandfieldstoptechnology features: trenchstop tm technologyoffering ?verylowv cesat ?lowturn-offlosses ?shorttailcurrent ?lowemi ?verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?drives ?solarinverters ?uninterruptiblepowersupplies ?converterswithmediumswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW50N60DTP 600v 50a 1.6v 175c k50ddtp pg-to247-3 g c e g c e
3 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 4.. t dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 6.,. 4/,. pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls /3.,. rsplmddqdcmncprglepc v ce 600v, t vj 175c, t p =1s 1) /3.,. diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 40,. 17,. diodepulsedcurrent, t p limitedby t vjmax 1) i fpuls /3.,. ercckgrrcptmjrec v ge ?0. t qfmpragpasgrugrfqrlbrgkc v ge =15.0v, v cc 400v jjmucblskcpmdqfmpragpasgrq:/... rgkccrucclqfmpragpasgrq8 3 t t vj =150c t sc 3 q powerdissipation t c =25c powerdissipation t c =100c p tot 1/7,0 /37,4 u mncprglehslargmlrckncprspc t vj 2.,,,)/53 a qrmpecrckncprspc t stg 33,,,)/3. a qmjbcpglerckncprspc utcqmjbcpgle/,4kk.,.41gl,dpmkaqcdmp/.q 04. a kmslrglermposck1qapcu kvgkskmdkmslrglenpmacqqcq81 m l thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics gerrfcpkjpcgrlac hslargmlac r th(j-c) .,14 .,25 i-u bgmbcrfcpkjpcqgqrlac hslargmlaqc r th(j-c) .,40 .,73 i-u / bcdglcbwbcqgel,lmrqshcarrmnpmbsargmlrcqr,
5 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage (br)ces v ge =0v, i c =0.20ma 600 - - v collector-emitter saturation voltage cesat v ge =15.0v, i c =50.0a t vj =25c t vj =175c - - 1.60 1.94 1.80 - v diode forward voltage f v ge =0v, i f =30.0a t vj =25c t vj =175c - - 1.45 1.39 1.70 - v gate-emitter threshold voltage ge(th) i c =0.80ma, v ce = v ge 4.1 5.1 5.7 v zero gate voltage collector current k ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40 - a gate-emitter leakage current k ges v ce =0v, v ge =20v - - 100 na transconductance i fs v ce =20v, i c =50.0a - 78.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance e ies - 1950 - output capacitance e oes - 109 - reverse transfer capacitance e res - 67 - ce =25v, v ge =0v,f=1mhz pf gate charge s g v cc =480v, i c =50.0a, v ge =15v - 249.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case n e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 1.0s k c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 255 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time v d(on) - 20 - ns rise time v r - 30 - ns turn-off delay time v d(off) - 215 - ns fall time v f - 18 - ns turn-on energy g on - 1.53 - mj turn-off energy g off - 0.85 - mj total switching energy g ts - 2.38 - mj v vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =7.0 , r g(off) =7.0 , l =32nh, c =60pf l , c fromfig.e energy losses include tail and diode reverse recovery.
6 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 diode reverse recovery time t rr - 115 - ns diode reverse recovery charge q rr - 0.75 - c diode peak reverse recovery current i rrm - 11.3 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - 125 - a/s t vj =25c, v r =400v, i f =30.0a, di f /dt =870a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 21 - ns rise time t r - 34 - ns turn-off delay time t d(off) - 277 - ns fall time t f - 55 - ns turn-on energy e on - 2.25 - mj turn-off energy e off - 1.39 - mj total switching energy e ts - 3.64 - mj t vj =175c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =7.0 , r g(off) =7.0 , l =32nh, c =60pf l , c fromfig.e energy losses include tail and diode reverse recovery. diode reverse recovery time t rr - 194 - ns diode reverse recovery charge q rr - 2.15 - c diode peak reverse recovery current i rrm - 18.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - 120 - a/s t vj =175c, v r =400v, i f =30.0a, di f /dt =870a/s
7 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.1 1 10 100 1000 0.1 1 10 100 t p =1s figure 2. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 25 50 75 100 figure 4. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 v ge =20v 15v 13v 11v 9v 7v
8 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 5. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 v ge =20v 15v 13v 11v 9v 7v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 10 0 25 50 75 100 t j =25c t j =175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 i c =25a i c =50a i c =100a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =7 ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 1 12 23 34 45 56 67 78 89 100 1 10 100 t d(off) t f t d(on) t r
9 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 9. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =50a,testcircuitinfig.e) r g ,gateresistor[ ] t ,switchingtimes[ns] 0 5 10 15 20 25 30 35 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =400v, v ge =15/0v, i c =50a, r g =7 ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0,8ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 0.0 1.0 2.0 3.0 4.0 5.0 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =7 ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 9 10 11 e off e on e ts
10 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 13. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =50a,testcircuitinfig.e) r g ,gateresistor[ ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =400v, v ge =15/0v, i c =50a, r g =7 ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =50a, r g =7 ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 350 400 450 500 550 600 0.0 1.0 2.0 3.0 4.0 5.0 6.0 e off e on e ts figure 16. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 120v 480v
11 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 18. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j =150c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 13 14 15 16 17 18 19 20 0 50 100 150 200 250 300 350 400 450 500 figure 19. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 2 4 6 8 10 12 14 16 figure 20. typicaligbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 1e-4 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.01216198 3.3e-5 2 0.0542188 2.0e-4 3 0.06849304 2.3e-3 4 0.1687298 0.01219856 5 0.01315813 0.09700046 6 1.2e-3 1.874087
12 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 21. typicaldiodetransientthermalimpedance asafunctionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 1e-4 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.03101824 2.9e-5 2 0.1189354 1.7e-4 3 0.1745904 1.7e-3 4 0.268737 9.2e-3 5 0.0286638 0.0630565 6 1.4e-3 1.832934 figure 22. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 600 700 800 900 1000 1100 1200 1300 50 100 150 200 250 300 t j =25c, i f = 30a t j =175c, i f = 30a figure 23. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 600 700 800 900 1000 1100 1200 1300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j =25c, i f = 30a t j =175c, i f = 30a figure 24. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 600 700 800 900 1000 1100 1200 1300 0 5 10 15 20 25 30 t j =25c, i f = 30a t j =175c, i f = 30a
13 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 figure 25. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 600 700 800 900 1000 1100 1200 1300 -200 -150 -100 -50 0 t j =25c, i f = 30a t j =175c, i f = 30a figure 26. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80 90 100 t j =25c t j =175c figure 27. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i f =15a i f =30a i f =60a
14 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 package drawing pg-to247-3
15 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
16 IKW50N60DTP trenchstop tm p erformance series rev.2.1,2016-02-08 revisionhistory IKW50N60DTP revision:2016-02-08,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 - release final datasheet publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2016. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallinnoevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductisnot qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmaynot beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.

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